Selective refractory metal and nitride capping

ABSTRACT

A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.10/435,010 (Now U.S. Pat. No. 6,844,258) filed May 9, 2003. Thisapplication is incorporated herein by reference for all purposes.

FIELD OF THE INVENTION

This invention pertains to methods for depositing refractory metal andcreating a refractory metal nitride over the deposited refractory metal.More specifically, the invention pertains to methods that deposit alayer of refractory metal and refractory metal nitride over copper lineson a semiconductor device so as to prevent electromigration of thecopper line and diffusion of copper into substrate material.

BACKGROUND OF THE INVENTION

Because copper has a lower resistivity and higher resistance toelectromigration compared to aluminum, it has become the preferredmaterial for creating conductive lines in high performance integratedcircuits. Since Cu does not readily form volatile compounds and istherefore difficult to dry etch, the fabrication of Cu interconnectsrequires a damascene approach, whereby a metal is deposited into arecess etched in an insulating material (dielectric) and then planarizedusing chemical mechanical polish (CMP). While the damascene concept isstraightforward and has been used for centuries in jewelry making, etc.,the fabrication of damascene Cu interconnects in integrated circuits isa challenging task due to problems associated with Cu integrations.

One integration issue is that Cu can readily diffuse into surroundingoxide-like or polymeric dielectric materials when subjected to hightemperatures of subsequent fabrication processes. Diffusion of Cu intothe surrounding insulating dielectric will lead to line-to-line leakagesand eventual device failure. So it is necessary to fully enclose Culines with diffusion barriers. FIG. 1 illustrates a cross section of apart of a damascene device in which a Cu line 101 is encapsulated bymetal diffusion barriers 105, typically made of tantalum, tantulumnitride or combination thereof, between the Cu and surroundingdielectric material 107. In addition, a dielectric capping layer 103 isdeposited between the Cu line 101 and dielectric 109 to avoid electricalshorting of adjacent metal lines and to complete the Cu encapsulation.The dielectric capping layer material is typically silicon nitridebecause of its ability to block Cu diffusion and resist the dielectricetches used to define subsequent vias to the overlying metal level.Prior to deposition of the dielectric capping layer, the copper oxidethat has formed on the surface of the Cu (Cu readily oxidizes whenexposed to water or air) must be removed by chemical reduction topromote adhesion and optimize device reliability.

Another integration issue when using Cu as the primary conductor indevices is that Cu can easily electromigrate into the surroundingdielectric material. In general, electromigration occurs when the metalatoms of conductive lines are subjected to electric fields while thecircuit is in operation. The metal atoms will redistribute in thedirection of the electron flow to form voids (areas lacking metalmaterial) and extrusions (protrusions of metal material outside of themetal or dielectric barrier) along the length of the metal lines. Forexample, this is illustrated in damascene device of FIG. 1. A void 111has formed at the silicon nitride/Cu interface, causing the Cu buildupand formation of an extrusion 113 downstream of the electron flow 115 inthe Cu line 101. Voids will cause the Cu line to thin and eventuallyseparate completely, causing an open circuit. Extrusions can cause theCu metal to extend past the Cu line into an adjacent Cu line, therebycausing a short circuit.

Although silicon nitride as a capping layer material is effective inblocking Cu diffusion, there are some problems of using a siliconnitride capping layer, especially related to the electromigration issuesdescribed above. For example, it has been observed that voids caused byelectromigration (described above) are observed most frequently at theedges of the Cu lines at the silicon nitride/Cu interface. This islikely partly due to the poor adhesion between silicon nitride and Cu.Furthermore, once a void is formed, the area around the void willexperience increased electron flux, causing even more pronouncedelectromigration and acceleration of the degradation process. Anotherissue with using silicon nitride as a capping layer is that siliconnitride has a relatively high dielectric constant. This means that whena layer of silicon nitride is directly on top of and adjacent to the Cuconductive lines, there is an increase in overall capacitance betweenthe conductive lines, which increases the RC time delay.

Because of the problems associated with using silicon nitride, othershave proposed using other materials for capping Cu lines. For example,Saito, et al (0-7803-6679-4/01, 2001 IEEE) has studied the preferentialdeposition of tungsten to cap Cu lines. One reason for this is becausetungsten adheres well to Cu. In addition, tungsten has a relatively lowresistivity compared to silicon nitride.

There are other integration issues, however, associated with usingtungsten and other refractory metals for capping of Cu lines. Since arefractory metal is more conductive than silicon nitride, it must beselectively deposited over copper lines with minimal coverage over theinsulating regions of the device. It is also important that therefractory metal be deposited conformally and particle-free so thatthere is good contact between Cu and the capping layer. This uniform andselective deposition of a refractory metal can be difficult to achieve.In a single-step process certain areas of the substrate will start tonucleate before other areas. The film will then start to grow in theseregions first, leading to a large uncontrolled non-uniformity. In somecases the regions that started growing first will get thick, therebycausing adjacent areas of the substrate to loose selectivity.

What is therefore needed is a process for forming a selective refractorymetal capping layer that obviates these and other problems.

SUMMARY OF THE INVENTION

The present invention provides a method for depositing a refractorymetal capping layer and creating a refractory metal nitride over thisdeposited refractory metal effective for preventing Cu electromigrationand diffusion in Cu semiconductor devices. The invention involves atleast two of the following operations: creating a nucleation layer ofrefractory metal over at least the exposed Cu lines, depositing therefractory metal in bulk over at least the nucleation layer surface (orexposed copper lines if no nucleation layer is used), and nitriding atleast an upper portion of the bulk refractory metal layer.

In one embodiment, the methods of the invention first reduce copperoxide on the exposed copper lines prior to refractory metal deposition.The method may employ hydrogen gas at suitable chamber conditions toreduce the Cu oxide to Cu metal. Alternatively, the method may reducethe copper oxide using a mixture of hydrogen gas and one or both ofargon or nitrogen gas. Alternatively, the method may employ a reducingagent such as SiH₄, Si₂H₆ or B₂H₆. The Cu surface may be cleaned priorto being reduced by using either hydrogen plasma or wet cleaning.

Using normal bulk deposition procedures, initiation of deposition can bedifficult. As a consequence, non-uniform film growth will occur, withsubsequent loss of selectivity in some regions of the wafer. One way ofgetting around this problem is to use a process step that is tuned toachieve nucleation, as opposed to bulk film growth. The processconditions are then changed for the bulk of the growth. Therefore thepresent invention preferably makes use of a refractory metal nucleationlayer to facilitate the overall deposition process. The use of anucleation layer also allows precise control of the amount of refractorymetal deposited. In addition, the resultant nucleation layer isconformal, uniform and particle free.

Accordingly, one aspect of the invention provides a method fordepositing a refractory metal nucleation layer onto the Cu surface ofthe substrate surface (which has been optionally reduced and/orcleaned). The method may involve depositing a tungsten nucleation layerby using, for example, one of WF₆, WC1₆ or W(CO)₆. Alternatively, themethod may involve depositing a tantalum, titanium, molybdenum,ruthenium or cobalt nucleation layer using an appropriate precursor. Themethod may be performed such that the copper oxide reduction process andthe deposition of the refractory metal nucleation layer process use thesame chamber, but possibly at different chamber temperatures andpressures.

In one embodiment, the nucleation layer is formed by an atomic layerdeposition (ALD) method by sequentially injecting a refractory metalprecursor (e.g., WF₆) and a reducing agent (e.g., SiH₄ and/or Si₂H₆) gasinto the reaction chamber. Alternatively, the method may produce therefractory metal nucleation layer by first converting the exposed Cusurfaces to copper silicide and then converting the copper silicide tothe desired refractory metal nucleation layer. This method may beperformed by exposing the Cu surface to SiH₄ to form copper silicide,then exposing the copper silicide to a refractory metal-containing gasto form the refractory metal nucleation layer. The method may beperformed such that the formation of the copper silicide and conversionof copper silicide to the desired refractory metal use different chambertemperatures and pressures. Preferably though, the two operations usethe same process chamber. In all embodiments, the refractory metaldeposition is preferably performed in a manner that selectively coversthe exposed copper lines, without depositing significantly onsurrounding dielectric material.

The nitride layer is preferably formed on top of the refractory metallayer (bulk or nucleation) by a nitrogen containing gas such as N₂, NH₃or N₂H₄. The nitrogen containing gas may be converted, at leastpartially, to a plasma, which is, in one embodiment, directed to thesubstrate by biasing the substrate with an RF powered electrode.

These and other features and advantages of the invention will bedescribed in more detail below with reference to the associateddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic illustration of part of a damascene structure in asemiconductor device showing a void in a copper line caused by theelectromigration.

FIG. 2 is a process flow diagram illustrating relevant operationsemployed in the present invention. A refractory metal nucleation layeris formed onto a copper-dielectric substrate, followed by bulkdeposition of the refractory metal, followed by nitridation of the bulkrefractory metal surface.

FIG. 3 is a schematic illustration of part of a damascene structure in asemiconductor device wherein the copper is capped with a refractorymetal nucleation layer, a bulk refractory metal and refractory metalnitride.

FIG. 4 is a schematic diagram showing the basic features of an apparatussuitable for practicing the current invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Introduction

As indicated, the present invention provides a capping layer of arefractory metal. That metal may be formed by first depositing anucleation layer followed by a bulk layer. In some embodiments, thenucleation layer is all that is required. This may be the case when onlya very thin refractory metal layer is required. With or without a bulklayer deposited on the nucleation layer, the invention may also employ anitride layer formed from some or all of the refractory metal.

A typical process flow for the formation of a capping layer employed inaccordance with this invention is illustrated in the flowchart of FIG.2. First a partially fabricated semiconductor device is provided 201.This device has exposed copper lines in a dielectric support. In thecase of a damascene process, the copper lines are inlaid in thedielectric support after the support has had line paths and vias etchedtherein. Typically the partially fabricated device has a planarizedsurface comprised of the exposed copper lines and surroundingdielectric. Conventionally, planarization is achieved via chemicalmechanical polishing (CMP). But other planarization techniques such aselectropolishing or related electrolytic technique may be used. Afterthe substrate goes through a CMP process, it may then be subjected to awet clean and water rinse. See 203.

After the substrate is cleaned (if at all), it is often desirable toexpose the surface of the Cu to a reducing agent. See 205. This is donebecause in the processes used to generate the device, the exposed copperlines will have some amount of copper oxide formed thereon. Reducing theexposed Cu will promote the formation of high quality adherent cappinglayers. This is an optional procedure for this invention. Examples ofsuitable reducing agents include H₂, SiH₄, Si₂H₆ and B₂H₆. As a furtheroption, the wafer can then be cleaned using, for example, a hydrogenplasma.

After performing the cleaning and reduction operations (if they areperformed at all), the process forms a nucleation layer of a refractorymetal over at least the exposed copper lines. This may be accomplishedby various techniques as will be described in detail later. See 207 and209–211. Thereafter, a refractory metal bulk layer is optionally formedby a bulk deposition procedure 213. The nucleation layer is distinctfrom the bulk layer in that it is formed by a process that deposits therefractory metal relatively easily—in comparison to the bulk depositionprocess. In one example, the nucleation layer is deposited by arefractory metal precursor (e.g., WF₆) and a silicon containing reducingagent (e.g., silane). See 207. The bulk layer is deposited with asimilar metal precursor, but the reducing agent is frequently hydrogen.In another approach, the nucleation layer is formed in two separateoperations, 209 and 211. In operation 209, the process forms a coppersilicide layer on the exposed copper lines. Subsequently, in operation211, the process reacts that silicide with a refractory metal precursorsuch WF₆, which creates volatile SiF₄ as a byproduct. The resultingnucleation layer is rich in refractory metal, e.g., tungsten in thiscase.

After the refractory metal bulk layer is formed at 213, the process nextinvolves converting some or all of the refractory metal layer(s) torefractory metal nitride. See 215. This is accomplished by exposing therefractory metal to a nitridation agent such as nitrogen, ammonia and/orhydrazine. If only a portion of the refractory metal is converted, thenthe resulting structure will comprise a bilayer of refractory metal andrefractory metal nitride. If the entire layer of refractory metal isconverted, then the resulting structure will not be a bilayer, andcontain only the nitride. Note that in some embodiments, no bulk layeris deposited and the entire nucleation layer is converted to nitride.The nitride layer is a more effective (in comparison to elementalrefractory metal) diffusion barrier and electromigration barrier.

After the nitride layer is formed (if necessary), the process continueswith formation of the next higher metallization layer with copper linesand dielectric (assuming that the previous layer was not the last layerof the device). See 217. Each metallization layer may be processed asdescribed above in the process flow of FIG. 2.

FIG. 3 illustrates a cross section of a part of a damascene device afterundergoing methods described in the present invention. As shown, a Culine 307 is embedded in an insulator 309. A refractive metal nucleationlayer 301 has been deposited over the Cu line, onto which a refractivemetal bulk layer 303 has been selectively deposited. An upper portion ofthe refractive metal bulk layer has been nitrided to form a refractivemetal nitride layer 305. In this example, the capping layer consists ofthe refractive metal nucleation layer (301), the refractive metal bulklayer (303) and the refractive metal nitride layer (305). The thicknessof each of these layers depends on the application and the technologynode. For many applications, the thickness of the refractive metalnucleation layer ranges between about 3 and 20 angstroms, the refractivemetal bulk layer ranges between about 8 and 100 angstroms and therefractive metal nitride layer ranges between about 5 and 20 angstroms.After the capping layer is deposited, typically fluorine-doped silicondioxide is deposited over the capping layer as part of the nextmetalization layer. Alternatively, a silicon nitride layer can bedeposited over the capping layer to further enhance the barrierproperties of the capping layer. Note that the via 308 to the overlyingmetal layer may contact the copper conductor directly as shown, oralternatively, may contact the refractory or refractory nitride if thedielectric etch used for via formation is selective to the refractorynitride or refractory metal.

Refractory Metal Nucleation Layer Formation

To provide for an effective capping layer for reducing copperelectromigration, it is preferable that the refractory metal layer bedeposited as a nucleation layer. A nucleation layer is a thin, conformallayer that has low contact resistance and adheres well to the underlyingsurface on which it is deposited. The morphology of the nucleation layeris often different from that of the bulk layer. For example, thenucleation layer generally has a relatively smaller grain size.

Refractory metals, such as tungsten, tantalum, molybdenum, titanium,ruthenium or cobalt are preferred materials for the nucleation layer.Generally, refractory metals have high melting points and bond stronglyto copper. An especially preferred refractory metal for use with thisinvention is tungsten.

As indicated previously, the refractory metal nucleation layer can beformed by various processes. Referring back to FIG. 2, two preferredprocesses are shown in process steps 207 and 209–211. The first is anatomic layer deposition (ALD) or chemical vapor deposition (CVD)technique 207. The second process is a two stage process that involvesfirst forming a copper silicide layer on the exposed copper line surface(209)—by reaction with silane for example—and second exposing the coppersilicide to a gas containing the desired refractory metal (211).

The first method described—depositing the refractory metal directlyusing ALD or CVD—involves exposing the copper surface to gaseous metalprecursor and reducing agent (FIG. 2, block 207). ALD methods differfrom CVD methods in that they are based on separate surface-controlledreactions. In ALD, the metal precursors and reducing agents are directedalternately over a substrate surface, separated by purging steps usingan inert gas or other method. ALD relies on the chemisorption of agaseous precursor to form a “saturated layer” of the metal precursor ona substrate surface. This allows for a more conformal, thin andcontrolled deposition compared to that formed by traditional CVDmethods.

In one embodiment of the present invention, ALD is used to form atungsten nucleation layer. Preferred metal precursors for tungsten areone of WF₆, WC1₆ and W(CO)₆. Corresponding precursors for molybdenum,tantalum, titanium, and other suitable refractory metals are known tothose of skill in the art. Preferred reducing agents include thefollowing: H₂ Si₂H₄, Si₂H₆ and B₂H₆. Generally, the depositionconditions depend upon the nature of the precursors/reactants, the flowrates and length of exposure to the precursor/reactants and the desiredthickness of the deposition film. Under typical conditions, the morepreferable flow rates of the tungsten precursor are between about 10 and20 sccm (over between about 1 and 5 seconds). Suitable pressure rangesfor the tungsten precursors are between about 0.1 and 10 Torr, morepreferably between about 0.5 and 1 Torr. Suitable substrate temperatureranges are between about 150 and 400 degrees Celsius, more preferablybetween about 250 and 350 degrees Celsius. Likewise, the hydridereducing agent exposure should be such that the hydride reactssufficiently with the saturated layer of tungsten precursor to leavetungsten metal on the substrate surface. Under typical conditions, themore preferable flow rates times for the hydride reducing agent arebetween about 10 and 100 sccm (over between about 1 and 5 seconds).Suitable pressure ranges for the reducing agent are between about 0.1and 10 Torr, more preferably between about 0.5 and 1.0 Torr. Suitablesubstrate temperature ranges are between about 150 and 400 degreesCelsius, more preferably between about 250 and 350 degrees Celsius.Temperatures and pressures for the metal precursor and hydride aregenerally similar.

Note that ALD processes form very thin layers of refractory metal (onthe order of single atom thickness) during each cycle. Therefore,depending upon application, it is desirable to repeat the cycles ofprecursor exposure and reducing agent exposure two or more times. Theexact number of cycles depends upon the desired thickness of thecomplete layer.

In one embodiment of the present invention, CVD is used to form atungsten nucleation layer. For CVD of tungsten, exposure to the gaseousreactants is not dependent upon the formation of a saturated layer toform on the substrate surface and is therefore performed in one pass.That is, CVD does not involve separate reaction cycles. The metalprecursors and the reducing agents are introduced to the surfacesubstrate at the same time. Like ALD, preferred metal precursors fortungsten are one of WF₆, WC1₆ and W(CO)₆ and preferred reducing agentsare one of H₂ Si₂H₄, Si₂H₆ and B₂H₆. Suitable pressures range from about1 and 10 Torr, more preferably between about 1 and 5 Torr. The flowrates to the reactants depend on the desired thickness and compositionof film deposition. Under typical conditions, the more preferable flowrates are between about 20 and 100 sccm. Suitable substrate temperaturesrange from about 300 and 450 degrees Celsius, more preferably betweenabout 350 and 400 degrees Celsius.

The second method described for forming the refractory metal nucleationlayer is a two-step process (FIG. 2, blocks 209–211). The first step inthis process is forming a Cu silicide layer. The second step is exposingthis Cu silicide layer to a reactive metal precursor to create the metalnucleation layer. In other words, the formation of Cu silicide isfollowed by the formation of a tungsten nucleation layer. This isaccomplished by exposing the Cu surface to a silane, preferably SiH₄.Under typical conditions, the more preferable flow rates of silane arebetween about 100 and 200 sccm. Suitable pressures range between about 1and 10 Torr, more preferably between about 1 and 5 Torr. Suitablesubstrate temperatures for the silicide reaction range between about 250and 400 degrees Celsius, more preferably between about 300 and 350degrees Celsius. After a Cu silicide layer of sufficient coverage andthickness is achieved, the Cu silicide is then exposed to a reactivetungsten precursor (or other refractory metal precursor) capable offorming a volatile silicon byproduct. The reactive tungsten precursorreacts with Cu silicide to convert the silicide into Cu metal and avolatile silicon compound such as SiF₄, with a tungsten nucleation layerresulting. Preferred metal precursors for tungsten are one of WC1₆ andW(CO)₆ and substituted-tungsten carbonyls, more preferably WF₆. Undertypical conditions, the more preferable flow rates for the reactantmetal precursor are between about 20 and 100 sccm. Suitable pressuresrange between about 1 and 40 Torr, more preferably between about 1 and10 Torr. Suitable temperatures range between about 300 and 450 degreesCelsius, more preferably between about 300 and 350 degrees Celsius.

After the refractive metal nucleation layer is formed, if the metallayer is not yet of desired thickness, subsequent bulk deposition ofrefractory metal may follow. Bulk deposition by ALD or CVD can beimplemented to form a refractory metal of desired thickness. Referringback to the process flow in FIG. 2, this is accomplished at block 213.Typically, the bulk deposition process employs the same or similarprecursor to that employed in the nucleation layer deposition. However,bulk deposition favors use of a different reducing agent, preferablyhydrogen or a mixture that is relatively rich in hydrogen, or anincrease in pressure.

Refractory Metal Nitride Formation

As indicated previously, although a refractory metal cap can beeffective for preventing electromigration at the silicon nitrideinterface, in some cases it is still possible for Cu to diffuse ormigrate through the refractive metal barrier. To improve the barrierqualities of the refractory metal cap, it may be necessary to convertpart of the cap into a refractory metal nitride layer. Referring back tothe process flow in FIG. 2, nitridation is shown at block 215.

Various suitable nitridation techniques are available to those skilledin the art. Many of these techniques involve contacting the substratewith a plasma containing nitride species. In one embodiment, therefractory metal nitride layer is formed by placing the semiconductorsubstrate on a RF electrode and exposing the refractory metal surface toa nitrogen containing plasma. Suitable nitrogen containing gasescomprises at least one of N₂, NH₃, and N₂H₄ or a mixture of gases thatcontain a nitrogen containing gas along with other inert gases such asargon or helium. Nitrogen atoms and ions are generated in the plasma andreact with the refractive metal surface to form the nitride. The biasplaced on substrate electrode affects the directional momentum of theionic species striking the substrate. In a typical case, the bias of theRF electrode ranges between about 10 and 500 watts, more preferablybetween about 50 and 100 watts. Suitable reactor pressures fornitridation range between about 0.05 and 10 Torr, more preferablybetween about 0.5 and 1 Torr. Substrate temperatures may range betweenabout 300 and 450 degrees Celsius, more preferably between about 300 and350 degrees Celsius.

Other embodiments of the invention employ reactors having an RFelectrode located away from the substrate. Such reactors may alsoinclude an electrode located beneath the substrate. In one example, thereactor includes an external RF electrode that is capacitively orinductively coupled, such as a High Density Plasma (HDP) system can beused. Generally, a high-density plasma is any plasma having electrondensity of at least about 1×10¹¹ electrons per cubic centimeter.Typically, though not necessarily, high-density plasma reactors operateat relatively low pressures, in the range of 100 mTorr or lower. In atypical example, the electrode frequency used in such HDP systems isabout 300 kHz, although other frequencies can be used. In someembodiments, the reactor employs a down-stream plasma.

FIG. 4 is a schematic of a typical apparatus in which the processes inthe present invention take place. The semiconductor wafer 403 is placedon top of a supporting pedestal 405 in a reaction chamber 401. Thesupporting pedestal 405 has a thermocouple or other temperature-sensingdevice attached to monitor the temperature of the wafer. The temperatureof the wafer can be heated by any number commonly known methods, such asa resistive heating element. A pressure gauge 413 monitors the pressureinside the chamber during operation. The metal halide 407 and reducingagent hydride 409 are introduced in a controlled manner using valves. Aneutral gas source 411, such as argon gas, allows for more chamberpressure and reactant concentration control. A plasma generator source417 allows for the introduction of hydrogen plasma for removing halogensafter reaction described previously. Nitrogen containing gas 419, suchas NH₃, can be introduced for an optional nitridation step describedpreviously. A pump with valve 415 is used to evacuate the chamber ofreactant by products and unused reactants between cycles of sampleexposure to reactant gases.

Although various details of the apparatus have been omitted forclarity's sake, various design alternatives may be implemented.Therefore, the present examples are to be considered as illustrative andnot restrictive, and the invention is not to be limited to the detailsgiven herein, but may be modified within the scope of the appendedclaims.

1. A semiconductor device comprising: (a) copper metal conductive linesinlaid in a dielectric support; (b) a refractory metal layer selectivelyformed on the copper metal conductive lines; and (c) a refractory metalnitride layer formed on a surface of the refractory metal layer oppositethe copper metal lines, wherein the refractory metal nitride iseffective for blocking copper electromigration and in the conductivelines and for blocking diffusion of copper from the copper conductivelines; wherein the refractory metal layer in (b) comprises a nucleationlayer and a bulk layer, and further wherein the nucleation layercomprises a refractory metal selected from tungsten, tantalum,molybdenum, titanium, ruthenium or cobalt.
 2. The semiconductor deviceof claim 1, wherein the refractory metal layer in (b) is between about 3and 100 angstroms thick.
 3. The semiconductor device of claim 1, whereinthe refractory metal nitride layer in (c) is between about 3 and 30angstroms thick.
 4. The semiconductor device of claim 1, wherein therefractory metal layer in (b) is tungsten.
 5. The semiconductor deviceof claim 1, wherein the bulk layer is tungsten.
 6. The semiconductordevice of claim 1, wherein the bulk layer comprises at least one oftungsten, tantalum, titanium, molybdenum, ruthenium or cobalt.
 7. Thesemiconductor device of claim 1, wherein the bulk layer is between about3 and 100 angstroms thick.
 8. The semiconductor device of claim 1,wherein the nucleation layer is between about 3 and 30 angstroms thick.9. The semiconductor device of claim 1, wherein the refractory metalresides selectively on the copper and not on other co-planar regions ofthe device.
 10. The semiconductor device of claim 1, further comprising:(d) a fluorine-doped silicon dioxide layer formed on at least therefractory metal nitride layer.
 11. The semiconductor device of claim 1,further comprising: (d) a silicon nitride layer formed on at least therefractory metal nitride layer.
 12. The semiconductor device of claim 1,wherein the semiconductor device is a damascene device.
 13. Thesemiconductor device of claim 4, wherein the refractory metal nitridelayer in (c) is tungsten nitride.